TEAM ASSIGNMENT Nš1: Structure of Semiconductors
10 pts
Due Monday November 8 in class
InGaAs (indium gallium arsenide) chemical formula can be more accurately described
by InxGa1-xAs,
where x can vary from 0 to 1. In other words this is a solid solution
where indium atoms replace (substitute) gallium ones (or viceversa)
in the compound structure (zinc blende type). This is semiconducting
material with numerous applications in electronic devices in general
and fast transistors in particular.
The lattice parameters of InAs and GaAs can be obtained
from the literature: you may use the web or - better - the
library databases. You must report at least two references
(be as accurate as possible) where you obtained both lattice constants.
The lattice parameter of InxGa1-xAs can be approximated
using Vegard's
rule (using InAs and GaAs as end points).
Using foam balls construct a model with four unit cells of In0.75Ga0.25As.
Make sure the model reflects proportionally the difference in atom
size and the composition. Your model will be judged based on: a) accuracy,
b) neatness, and c) durability.
Hand in the model plus a short report on how you prepare the model
(based on the chemical composition) as well as the references used
and a potential or current application of the material. The best model
will receive an additional 2 point bonus.
Please include ONLY the names of those team members who participated
in the assignment. Leave out (do not report) those students who did
not collaborate. Only those students whose names
are included will receive credit for this assignment.
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